Abstract It is reported that the 2016 Diamond Wire Cutting and Black Silicon Technology Forum will be held in Wuxi, Jiangsu Province on December 13. The conference will discuss the "13th Five-Year" photovoltaic industry outlook and solar cell market prospects, diamond wire cutting technology progress and process optimization,...
It is reported that the 2016 Diamond Wire Cutting and Black Silicon Technology Forum will be held in Wuxi, Jiangsu Province on December 13. The conference will discuss the “13th Five-Year†PV industry outlook and solar cell market prospects, diamond wire cutting technology development and process optimization, diamond wire cutting polysilicon wafer challenges and solutions, dry black silicon and wet black silicon process routes, Black silicon technology cost analysis and efficiency improvement trends. The report of the conference was brilliant, from GCL-Poly, Jingke, GCL, Shunfeng Optoelectronics, China Energy-saving Solar, Nakamura Superhard, 1366 Technologies, Nanjing Naxin, Nanjing Aerospace University, Bitai Technology, Dalian Liancheng Leading experts from companies such as the Institute of Microelectronics of the Chinese Academy of Sciences will give a wonderful speech report. The diamond-cutting polycrystalline solution and the black silicon process route will be the focus of discussion.
As we all know, parity online is the ultimate goal of photovoltaic power generation. In the production of crystalline silicon solar cells, the cost of silicon wafers accounts for the largest proportion. Reducing the cost of silicon wafers is crucial for realizing PV parity. Diamond wire cutting silicon wafer is a new technology developed in recent years. Compared with the traditional mortar cutting process, it has the advantages of less silicon consumption per unit capacity, high cutting efficiency, low cost of auxiliary materials and cutting thin silicon wafer. Monocrystalline silicon solar cells have a rapid decline in cost due to the popularity of wafer-side diamond wire slicing technology, and the market share is expected to increase from 15% in 2015 to more than 25% in 2016.
In this context, it is particularly urgent for the polysilicon industry to introduce the diamond wire cutting process as soon as possible. Diamond wire cutting polycrystalline silicon wafers mainly face two major problems: the risk of disconnection and the difficulty of softening. The optimization of the preparation and application technology of the diamond wire can effectively reduce the risk of wire breakage caused by hard spots of the ingot crystal when the diamond wire is cut. The black silicon technology can optimize the light trapping effect, effectively solving the problem of high reflectivity of the silicon wafer cut by the diamond wire and difficulty in the softening.
Black silicon technology is divided into dry black silicon and wet black silicon technology, which is an effective way to further improve the efficiency of polycrystalline solar cells. The popularity of diamond-cut silicon wafers and black silicon technology will once again pull the cost gap between polycrystalline and single crystal at the silicon end, and enhance the competitiveness of polysilicon solar cell routes. The continued demand for battery and component cost reduction and efficiency improvement in the photovoltaic market will also bring good market opportunities for diamond wire cutting and black silicon technology.
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