Semiconductor nanomaterials have many excellent photoelectric properties of semiconductor materials and nanomaterials, and are widely used in the fields of micro-size transistors, diodes, high-sensitivity photodetectors, high-performance solar cells, gas sensing, and clean energy preparation. One of the hot topics in the field of nanomaterials. However, due to the intrinsic optical and electrical properties of intrinsic semiconductor materials and the fixed band gap, their application is limited. The semiconductor nanomaterials with different compositions and obvious differences in photoelectric properties are heterogeneously grown and solid-solved with each other to form multi-component heterojunctions and solid solution nanomaterials with adjustable sizes, shapes, and compositions, so that semiconductor bans can be effectively controlled. The properties such as band width, luminous wavelength, and electrical transport provide new ideas for the control of optoelectronic properties of semiconductor nanomaterials.
Based on the principle of structure and lattice matching, taking full consideration of the similarity of chemical properties and controlling the chemical vapor deposition reaction process, Jiang Xin and Liu Baodan, researchers of the Functional Film and Interface Department of the National (Joint) Laboratory of Materials Science at the Institute of Metal Research, Chinese Academy of Sciences The experimental design achieved mutual solid solution between different binary semiconductor materials of GaP-ZnS and GaP-ZnSe (Fig. 1), and found that when a small amount of ZnS enters the GaP lattice to form a pseudo binary binary solid solution nanowire, it is found that A sharp increase in resistance induces the transition of the GaP nanowire from the semiconductor to the insulator; ZnSe causes the GaP bandgap to shrink after entering the GaP lattice. When the ZnSe content changes in the range of x=0.182-0.209, the GaP-ZnSe pseudo binary solid solution changes. The forbidden band width is continuously adjustable from 1.95eV to 2.2eV, and the emission wavelength continuously changes from 550nm to 650nm (Fig. 2). In addition, GaP-ZnS core-shell heterojunction nanomaterials were successfully prepared by further controlling the supersaturation of ZnS in the GaP mother crystal lattice. These compositions and multi-component solid solution and heterojunction nanomaterials with adjustable bandgap and optoelectronic properties are ideal materials for the preparation of high-performance optoelectronic nanodevices. Relevant results were published in Nano Letters (2013, 13, 85-90), Adv. Funct. Mater (2015, 25, 2543–2551) and ACS Appl. Mater. Interfaces (2013, 5, 9199−9204).
Recently, they collaborated with Zhang Jinsong and Jiang Chunhai, researchers of the Special Materials Preparation and Processing Research Department, to use SiC nanowires as templates to fully utilize the characteristics of high surface energy in cubic 3C-SiC nanowire stacking regions to induce hexagonal GaN in 3C-SiC defects. In the area of ​​preferential nucleation, cubic silicon carbide and hexagonal gallium nitride heterojunction nanostructures (3C-SiC/WZ-GaN) were successfully prepared. To further control the growth process at different stages, periodic heterojunction nanostructures such as GaN hexagonal pyramids and 3C-SiC/WZ-GaN core shells can be obtained on the surface of SiC nanowires. These semiconductor heterojunction nanomaterials with unique structures and functions will provide ideal model materials for the construction of new types of photovoltaic nanodevices such as field effect transistors and photodetectors. The full text of the relevant results was published online in the journal of the American Chemical Society (Nano Letters 2015, 15, 7837−7846. DOI: 10.1021/acs.nanolett.5b02454).
The above research results have been funded by the National Natural Science Foundation of China, the “Excellent Scholars†project of the Institute of Metals, the Key Innovation Project of the Institute of Metals Innovation, and the Youth Innovation Promotion Project of the Chinese Academy of Sciences.
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