According to reports from East China Normal University, a series of advances made by the research team of the Associate Professor Chen Shiyou of the Key Laboratory of Polarized Materials and Devices of the Ministry of Education, School of Information Science and Technology, of the School of Information Science and Technology of the People's Republic of China, in the research on photovoltaic conversion and defect properties of multi-component semiconductors. Published.
It is understood that finding semiconductor materials that are cheap, environmentally friendly, and have high conversion efficiency of photovoltaics is the key to the development of solar cell technology. In this context, a new class of quaternary semiconductors: CuZnSnS4 (CZTS) and CuZnSnSe4 (CZTSe) were developed. They have the advantages of strong absorption of light, abundant reserves of constituent elements, and non-toxicity, which are expected to replace the currently market-oriented but expensive and even toxic cadmium telluride (CdTe) and copper indium gallium selenide (CuInxGa1-xSe2) to make the next generation highly efficient. , cheap thin film solar cells, and to achieve a large area of ​​application. As there are up to four types of components, the types of defects in such semiconductors also increase significantly, which directly affects their photovoltaic conversion efficiency. The relationship between defects in these quaternary semiconductors and photovoltaic conversion is studied, and the efficiency of photovoltaic conversion is also improved. It has become an urgent issue.
However, at present, the understanding of the nature of defects in copper-zinc-tin-sulfur semiconductors is relatively small. Due to problems such as sample quality, it is difficult to conduct research through experimental characterization methods. This makes it difficult to answer many basic questions related to such issues. Why the growth conditions of rich zinc and copper are critical for increasing the efficiency of the battery, why the synthesized sample can easily deviate from the ideal stoichiometry, and what are the sources of p-type conductivity, and whether there are deep-level composite center defects in these semiconductors? and many more.
Focusing on the above issues, Associate Professor Chen Shiyou of the Polarization Materials and Devices Laboratory has worked closely with Fudan University, NREL, UCL, and Bath University in recent years. A continuous theoretical study was carried out and the first-principles calculations were simulated. From the microscopic mechanism, the above questions were answered. Relevant theoretical results have gained widespread attention from domestic and foreign counterparts after successive publications such as Appl. Phys. Lett. and Phys. Rev. B. The total SCI quotation of the series of papers has been cited nearly 400 times, and several theoretical predictions have been obtained. Confirmed. The recent 18-page paper systematically summarizes the latest theoretical results of the laboratory's research on copper, zinc, sulfur and copper zinc tin selenium defects and was published by Advanced Materials as a Progress Report, marking the Research has already reached a new level.
This series of research has won the support of projects such as the Research Innovation Fund of East China Normal University, the Innovation Team of the Ministry of Education, the National Major Scientific Research Program, the Shanghai Natural Science Foundation, and the National Natural Science Foundation.
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